As high-frequency circuit design evolves, the gap between theoretical models and practical application is narrowing thanks to recent computational breakthroughs. A 2024–2025 surge in co-simulation ...
Abstract: The p-type gate gallium nitride high-electron-mobility transistors (p-GaN HEMTs) have been the subject of aggressive research in the power semiconductor community, while there have also been ...
The 2026 campaign raises the stakes further, featuring a record-breaking grid of 30 drivers from 12 different countries and ...
Learning Digital Electronics gets an Elektor TV walkthrough, with 20+ practical logic projects and a 100-piece kit.
Abstract: This article proposes a silicon carbide (SiC) MOSFET transient model on the field programmable gate array (FPGA), which is suitable for the real-time simulation (RTS) of power electronic ...