Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature [1] to be a superior material to silicon (Si) in many properties for ...

The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, targeting automotive, energy, industrial, and telecom systems. The ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large ...

Latest generation EliteSiC M3e MOSFETs decrease turn-off losses by up to 50% for electrification applications Platform uniquely achieves a reduction in both conduction and switching losses on the ...

Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the ...

DURHAM, N.C.--(BUSINESS WIRE)-- Cree, Inc. (Nasdaq: CREE), the global leader in silicon carbide technology through its Wolfspeed business, today announced that Shenzhen Gospower Digital Technology Co.

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

We’ve seen how silicon carbide semiconductors offer a path of less resistance that enables higher-voltage power electronics for next-generation electric vehicles with big batteries and fast charging ...

Designed to compete with high voltage (≥ 1200V) silicon-based power devices like MOSFETs and IGBTs, silicon carbide (SiC) based semiconductor supplier Cree has launched what it claims is the ...

Latest generation silicon carbide semiconductors enable a significant increase in power conversion efficiency in solar power generation systems and associated energy storage. This white paper ...

Cree Inc.'s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (RDSon) of 80m at 25C. The RDSon remains below 100 m across its ...