TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO:6502) Semiconductor & Storage Products Company today announced the development of “TaRF8”, a next generation TarfSOI™ (Toshiba advanced RF SOI) ...
OTTAWA, Canada — IBM Corp. received praise for its implementation of the PowerPC750FX processor in a silicon-on-insulator (SOI) manufacturing process technology, today (May 5, 2003) from Semiconductor ...
Mixed-signal chip maker X-Fab Silicon Foundries is X-Fab offering a 110nm BCD-on-SoI process, claiming to be the first to do so. Called XT011, it “reflects the need for greater digital integration and ...
Silicon-on-insulator (SOI) will continue to find its place in high-performance applications and branch out into some of the networking and communications space. Scaling presents challenges for all ...
A new technical paper titled “Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process” was published by researchers at KTH Royal ...
“This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator ...
Toshiba has developed TaRF10, a new version of its TarfSOI (Toshiba advanced RF silicon-on-insulator CMOS process optimized for low-noise amplifiers (LNAs) in smartphone applications. In recent years, ...
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